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| AlN Thin Film Resonator Operated in Thickness Shear Mode Excited by Lateral Electric Field |
| Chen-Da, LI De-Hua, SONG Hong-Wei, WANG Cui-Ling, ZHANG Yu-Ping |
| (Department of Applied Physics, College of Science, Shandong Universities of Science and Technology, Qingdao 266510, Shandong, China) |
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Abstract Thin film bulk acoustic resonators operated in shear mode have promising applications in biochemical sensors. The shear mode AlN solid mounted resonator using lateral field excitation was presented. The resonator configuration consists of the highly coriented AlN piezoelectric film, the parallel electrodes on the film surface and the threeperiod SiO2/W acoustic Bragg reflector. The electric field characteristics were calculated by finite element modeling in order to design the electrode frame. The testing results of the finished device show that the pure shear mode wave can be excited at 2 GHz. The quality factor (Qs and Qp) and the effective electromechanical coupling content (K2eff) is 434, 393 and 0.97 %, respectively. The longitudinal wave is restrained by the effective lateral electric field and the frequency selectivity of the acoustic reflector.
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Published: 30 March 2011
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