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| Effect of Device Size on Pulse Quenching in a 65 nm Bulk CMOS Process |
| LI Peng, ZHAO Zhen-Yu, ZHENG Chao, ZHANG Min-Xuan |
| （College of Computer, National University of Defense Technology, Changsha 410073, China） |
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Abstract The connection between the size of passive inverter and trend of pulse quenching was studied by using circuit level simulation under 65nm bulk complementary metaloxidesemiconductor transistor (CMOS) process. It is found that bipolar amplification plays an important role in pulse quenching trend after changing the size of passive inverter. Pulse quenching will be zoomed in after increasing the size of passive inverter, whose inner bipolar amplification is stronger. In the contrast, pulse quenching will be zoomed out after increasing the size of passive inverter.
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Received: 30 May 2012
Published: 30 January 2013
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