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| Master-Equation Simulation of Double-Island Single-Electron Transistor Based on Periodical Characteristics |
| SUI Bing-Cai, GAO Jun, CHEN Xiao-Bao, ZHANG Chao, FANG Liang |
| (College of Computer, National University of Defense Technology, Changsha 410073, China) |
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Abstract The periodical characteristics of double-island single-electron transistor (SET) were analyzed by stable diagram and Monte-Carlo method. Seven typical states were selected to simplify the masterequation simulation, and to improve the limitation of the method by the periodical characteristics. The result shows that the proposed method can efficiently simulate the current and voltage character of double-island SET, and can be simply extended to multi-island SETs, which is very useful for the VLSI of multi-island SETs.
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Received: 16 May 2012
Published: 30 January 2013
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