A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Xu Ru; Chen Peng; Liu Xiancheng; Zhao Jianguo; Zhu Tinggang; Chen Dunjun; Xie Zili; Ye Jiandong; Xiu Xiangqian; Wan Fayu; Chang Jianhua; Zhang Rong; Zheng Youdou

doi:10.1016/j.chip.2023.100079

Xu Ru, Chen Peng, Liu Xiancheng, Zhao Jianguo, Zhu Tinggang, Chen Dunjun, Xie Zili, Ye Jiandong, Xiu Xiangqian, Wan Fayu, Chang Jianhua, Zhang Rong, Zheng Youdou

Chip ›› 2024, Vol. 3 ›› Issue (1) : 100079-8.

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Chip ›› 2024, Vol. 3 ›› Issue (1) : 100079-8. DOI: 10.1016/j.chip.2023.100079

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A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 3(1): 100079-8 https://doi.org/10.1016/j.chip.2023.100079

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Received	Accepted	Published
2023-08-16	2023-12-11	2023-12-16
Issue Date
2023-12-16

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