Research article

On-chip single-photon chirality encircling exceptional points

  • Zhen-Nan Tian 1, ,
  • Feng Yu 1, ,
  • Xu-Lin Zhang , 1, * ,
  • Kai Ming Lau 2 ,
  • Li-Cheng Wang 1 ,
  • Jensen Li 2 ,
  • C.T. Chan , 2, * ,
  • Qi-Dai Chen , 1, *
Expand
  • 1 State Key Laboratory of Integrated Optoelectronics, College of Electronic Sci-ence and Engineering, Jilin University, Changchun 130012, China
  • 2 Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong 999077, China
*E-mails: (Xu-Lin Zhang),
(C.T. Chan),
(Qi-Dai Chen)

These authors contributed equally to this work.

Received date: 2023-07-12

  Accepted date: 2023-08-24

  Online published: 2023-08-28

Abstract

Exceptional points (EPs), which are typically defined as the degeneracy points of a non-Hermitian Hamiltonian, have been investigated in various physical systems such as photonic systems. In particular, the intriguing topological structures around EPs have given rise to novel strategies for manipulating photons and the underlying mechanism is especially useful for on-chip photonic applications. Although some on-chip experiments with the adoption of lasers have been reported, EP-based photonic chips working in the quantum regime largely remain elusive. In the current work, a single-photon experiment was proposed to dynamically encircle an EP in on-chip photonic waveguides possessing passive anti-parity-time symmetry. Photon coincidences measurement reveals a chiral feature of transporting single photons, which can act as a building block for on-chip quantum devices that require asymmetric transmissions. The findings in the current work pave the way for on-chip experimental study on the physics of EPs as well as inspiring applications for on-chip non-Hermitian quantum devices.

Cite this article

Zhen-Nan Tian , Feng Yu , Xu-Lin Zhang , Kai Ming Lau , Li-Cheng Wang , Jensen Li , C.T. Chan , Qi-Dai Chen . On-chip single-photon chirality encircling exceptional points[J]. Chip, 2023 , 2(4) : 100066 -7 . DOI: 10.1016/j.chip.2023.100066

INTRODUCTION

Exceptional points (EPs), first introduced in quantum mechanics by investigating parity-time (PT) symmetric systems, are defined as the coalescence of both the eigenvalues and eigenvectors of a non-Hermitian Hamiltonian1-4. Recent studies have revealed their intriguing physics in different physical systems which have enabled various applications5-16. In particular, the complex eigenvalues around an EP form self-intersecting energy surfaces, a hallmark feature of non-Hermitian systems that allows the exchange of eigenstates via a stroboscopic encircling of the EP in a parameter space17,18. Interestingly, if the system evolves dynamically around a closed loop encircling the EP, i.e., changing an eigenstate in the real-space structure to mimic the looping of the EP in the parameter space, the dynamics is revealed to be chiral19-30. This chiral approach for manipulating waves without introducing chiral structures is unique to non-Hermitian systems, since its realization requires the breakdown of adiabaticity which is resulted from non-Hermiticity31-33.
Most of the studies on the dynamical encirclement of EPs rely on the platform of photonic waveguides20-30 since it is quite convenient to design a variation of the structure along the waveguiding direction in order to mimic the EP encirclement process. Meanwhile, photonic waveguides are basic elements on a photonic chip. Therefore, the dynamical EP encirclement process would be extremely useful for manipulating photons on photonic chips. Although a few EP-related photonic chips have been reported22-30 the experiments were conducted in the classical regime with the source of lasers. Photonic chips are also powerful platforms for exploring quantum phenomenon and associated applications where single photons or multi-photons are used as the information processing carrier. However, the corresponding non-Hermitian experiments remain largely absent.
In the current work, an experiment that realizes the dynamical encircling of an EP on a photonic chip towards single-photon manipulations and applications was realized. A passive anti-parity-time (anti-PT) symmetric photonic system which supports a second-order EP was designed. The unique topological structure of anti-PT symmetric non-Hermitian systems makes it possible that the eigenmodes can be used for chiral mode switching lie in the PT-broken phase. As a result, single-photon states employing path-encoding or polarization-encoding can be conveniently used for on-chip asymmetric transmission applications. Experiments with the adoption of both lasers and single-photons through coincidences measurement were performed to verify the EP-encirclement induced chiral photon transmission phenomenon. The proposed system has the potential to become a building block of on-chip asymmetric quantum devices.

RESULTS AND DISCUSSION

EP encircling in on-chip passive anti-PT-symmetric systems

Fig. 1a depicts a schematic diagram of the experimental system which consists of three elliptical waveguides with the center one being lossy. Similar non-Hermitian architectures have been studied before, based on microwave platforms16 and integrated photonic platforms29,30 with the adoption of classical light. In this work, femtosecond laser direct writing techniques34-36 were employed to fabricate the device in boroaluminosilicate glasses, and the measurement results showed both classical light and single photons. The technique in this work allows the fabrication of three-dimensional waveguide arrays and the proposed idea may inspire the design of three-dimensional on-chip non-Hermitian devices. In the system, the straight waveguide S exhibits a loss of ∼40 dB/cm, which is achieved by re-exposing the waveguide at equally-spaced points (see Methods). This technique can create an array of scatterers that induces significant scattering/transmission losses for photons propagating in waveguide S. The loss of a single scatterer is highly tunable since it strongly depends on the exposure time and laser power (Fig. 1c). In the defined “EP encircling region” (with length L = 14 mm), the two gap distances g1 and g2 are designed to be varying (also see Fig. 1b for top view) so that an EP is dynamically encircled. The two end facets of waveguide 1 are referred to as port 1 and 1′ and so forth for waveguide 2.
Fig. 1. a, Schematic diagram of a passive anti-PT-symmetric system consisting of three waveguides in boroaluminosilicate glass. The upper inset depicts that in the EP encircling region, electromagnetic waves or single photons propagating in the system is equivalent to a process that an EP is dynamically encircled in the g-α parameter space. Photographs of the fabricated sample are also given in the inset; b, Top-view of the three waveguides in the EP encircling region; c, Measured scattering loss of a single scatterer as a function of the exposure time and laser power, where the dashed circle marks the experimental configuration.
Electromagnetic waves propagating in the paraxial waveguides system is governed by a Schrodinger-like equation H ( z ) = ( 0 κ 1 ( z ) 0 κ 1 ( z ) i γ κ 2 ( z ) 0 κ 2 ( z ) δ ) , , and the 3 × 3 non-Hermitian Hamiltonian is expressed as follows:
H ( z ) = ( 0 κ 1 ( z ) 0 κ 1 ( z ) i γ κ 2 ( z ) 0 κ 2 ( z ) δ ) ,
Where, κ1 and κ2 are coupling coefficients that can be determined from g1 and g2 (inset of Fig. 2a), γ = 6 × 10−5k0 denotes the loss of waveguide S with k0 being the vacuum wave number, and δ is a detuning parameter (see Supplementary materials, Sec. I for details on fitting the Hamiltonian). The eigenvalues of the Hamiltonian are the change of the waveguide propagation constant introduced to that of an individual lossless waveguide. We labeled eigenmodes polarized along the y-axis as vertical-polarized modes (V-modes) and studied their EPs at wavelength of 810 nm in a gαδ 3D parameter space, where we have introduced g = (g1 + g2)/2 and α = (g1g2)/(g1 + g2). Fig. 2a plots the positions of all the EPs (of second-order) which form two types of exceptional lines (ELs). The dashed EL is located on the δ = 0 plane and satisfies κ 1 2 + κ 2 2 = γ 2 / 4 . The solid ELs located at κ 1 = κ 2 = | δ | γ / 2 appear in the region δ ≠ 0 and their existence is a consequence of the passive anti-PT symmetry of the system. Detailed derivations and discussions were left on the origin of the ELs as well as the effective Hamiltonian of the system which is passive anti-PT-symmetric (i.e., anti-PT-symmetric but the diagonal term is shifted by a constant) to Supplementary materials, Sec. II, and here we only focus on the EP (see the yellow star) in a gα 2D parameter space with a fixed value δ = 9 × 10−6k0 (see the grey surface).
Fig. 2b and c plot the real part and imaginary part of the eigenvalues EH of the Hamiltonian in the gα parameter space, respectively. An EP (marked by the star) can be found as the coalescence of the red sheet and the blue sheet. This EP links the symmetric phase and broken phase (marked by white dashed lines), which can be defined by the symmetry of the eigenfunctions. The inset of Fig. 2c shows the eigenfunctions at g = 10 µm and α = 0 (calculated using COMSOL37, also see Fig. S1). The broken eigenmode symmetry confirms that this point is in the broken phase. Considering that the real/imaginary parts of the eigenvalues bifurcate/coalesce there, it can be safely stated that our system is passive anti-PT-symmetric.
Fig. 2. a, Calculated positions of EPs which form three ELs (orange solid and dashed lines) in the gαδ 3D parameter space. The grey plane depicts the g-α 2D parameter space used in experiment where a closed loop (black line) is generated to encircle the EP (yellow star). The inset plots the fitting value of κ1 (κ2) as a function of g1 (g2); b, c, Real part (b) and Imaginary part (c) of the eigenvalues of the non-Hermitian Hamiltonian in the g-α parameter space. The symmetric phase and broken phase are marked by the white dashed lines. The starting/end point of the loop lying on the broken phase is marked by the circle with the corresponding eigenfield distributions given in the inset; d-g, Trajectories of the state evolution on the real part of the energy surface with port 1 (d), port 2 (e), port 1′ (f), and port 2′ (g) as the excitation port. All the simulations were performed for the V-modes at 810 nm.
A loop is created to encircle the EP, with the above point in the broken phase as the starting/end point (see the loop in Fig. 2a). The loop formula is given in Methods section. Following which the sample in Fig. 1a was fabricated. A wave incident through port 1 or 2 and exit through port 1′ or 2′ follows a counter-clockwise loop, while the wave excited through port 1′ or 2′ leads to a clockwise-loop process. The Hamiltonian equation (see Fig. S2 for details) was solved with these four ports being excited respectively, and the state evolution trajectories were summarized on the energy sheets in Fig. 2d-g. It should be emphasized that the process in Fig. 2f is more complicated than that of the other three, since the initial state will encounter a nearly degenerate region (which is marked by the yellow dashed line in Fig. 2b) which is resulted from the exceptional line on the δ = 0 plane in Fig. 2a. When crossing this region, the power is almost equally redistributed into two eigenstates, so that the evolution trajectory was plotted on both the red and grey sheets there (also see Fig. S2 for a more detailed explanation). Fortunately, these complicated evolution details will not affect the mode conversion results, since it was found that the output state for counter-clockwise loops is always the mode localized in waveguide 2 (Fig. 2d and e), whereas clockwise loops result in a final state in waveguide 1 (Fig. 2f and g). This is the phenomenon of chiral mode switching, which has been realized in passive PT-symmetric systems for symmetric/antisymmetric modes, i.e., coupled modes localized in two waveguides21,24. In contrast, our system enables the chiral transmission of on-chip fundamental modes that are bounded in only one waveguide owing to the topological structure of passive anti-PT-symmetric energy surfaces. The mechanism underlying the chiral phenomenon is that the eigenstates tend to stay on the lowest-loss energy sheet (i.e., the blue sheet), otherwise non-adiabatic transitions19-21 (NATs) from higher-loss sheet to lower-loss sheet would occur (see the NAT in Fig. 2e and f).

Experimental results in the classical regime

Experimental results were shown with the adoption of classical laser light at 810 nm (MDL-III, CNI). Fig. 3a-d show the output images (measured by XG500, XWJG) of the V-modes with excitations at different ports. When port 1 or port 2 is excited corresponding to a counter-clockwise loop to encircle the EP, the output power in waveguide 2 is always significantly larger than that in waveguide 1 (Fig. 3a and b). If only taking waveguide 2 into consideration, the output power in Fig. 3a (∼2.78 mW) is much higher than that in Fig. 3b (∼0.39 mW). This is ascribed to the fact that the process that is adiabatic (i.e., port 1 in, port 2′ out, also see Fig. 2d) would exhibit a lower loss than that with a NAT (i.e., port 2 in, port 2′ out, also see Fig. 2e). In order to further demonstrate this point, the top-view light diffraction patterns in the device for the above two cases were depicted in Fig. 3e and f (photographed by Zyla 5.5 s CMOS, Andor). Since light in waveguide S can be strongly diffracted by the array of scatterers and then captured by our camera, these “noises” were lowered when plotting Fig. 3e and f in order to make the patterns in waveguide 1 and 2 more clear. Fig. 3e shows an adiabatic transfer of light from waveguide 1 to waveguide 2, whereas Fig. 3f depicts a process with a NAT and light also exits the device via port 2′ but with a much lower intensity. The clockwise route can be investigated in the same way, as shown in Fig. 3c and d, where the output mode is mainly localized in waveguide 1. These measurements clearly demonstrate the chiral mode switching dynamics, and the NAT indicated by the power difference is another evidence of such dynamics.
Fig. 3. a-d, Measured diffraction patterns of laser (∼810 nm) at the output facet with port 1 (a), port 2 (b), port 1′ (c), and port 2′ (d) being excited. The values of the output power in waveguide 1 and waveguide 2 are indicated in the inset; e, f, Top-view light diffraction patterns in the device with port 1 (e) and port 2 (f) being the input port. The yellow dashed lines mark the center line of each waveguide. The working mode is the V-mode in (a-f); g, h, Ratios of the measured S parameters as a function wavelengths for the V-modes, where the chiral mode switching phenomenon can be observed in the grey region; i, j, Items shown are the same as those in (g), (h)except for the H-modes.
Investigations on the bandwidth of the chiral phenomenon was performed with the adoption of a tunable laser (ranging from 730 to 860 nm, Tsunami, Spectra-Physics). The S parameters Sm,n of the system was measured, which is defined as the transmission from port n to port m, where, m, n = 1, 2, 1′, or 2′. Fig. 3g and h plot the ratio of S parameters (see the inset for definitions) for counter-clockwise loops and clockwise loops, respectively. It is found that, in the grey region (∼790 to 820 nm), S2′,1 and S2′,2 are the predominant S parameters for counter-clockwise loops, while S1,1′ and S1,2′ dominate the output for clockwise loops. These results indicate the EP-encirclement induced chiral mode switching. All the above measurements were performed for the V-modes, and the S parameters were also measured for horizontal-polarized modes (H-modes that are polarized along the x-axis). The corresponding results are given in Fig. 3i and j, in which the chiral mode switching behavior can also be found but in a different wavelength range (∼740 to 780 nm). Such difference should be attributed to dispersion of the eigenmodes as well as the birefringence of the fabricated waveguides. Full results of the S parameters are given in Figs. S4 and S5.

Experimental results in the single-photon regime

Experiments in the single-photon regime were conducted to show that the above chiral transmission phenomenon also applies to single photons. In the quantum regime, the eigenstates supported in the system are richer than those in the classical system. More specifically, at the starting/end point of the encircling loop, the waveguides system supports classical-like states including | 1 1 0 S 0 2 and | 0 1 1 S 0 2 , where the subscript and the number indicate the waveguide and the photon number within, respectively. Moreover, the quantum system also supports superposition states that have no classical counterparts such as ( | 1 1 0 S 0 2 + e i φ | 0 1 0 S 1 2 ) / 2 , where, φ depicts a phase. These quantum states are often used on photonic chips for various applications. Therefore, it is necessary to verify whether these single-photon states can be employed for the chiral transmission by dynamically encircling the EP.
The experimental setup is depicted in Fig. 4a, where pairs of indistinguishable photons at 810 nm were generated by a BBO crystal. One photon was launched into one port of the fabricated sample and the other photon propagated in an optical fibre. Two avalanche photodetectors at the output side of the system were employed to measure their photon coincidences (see Methods), which can demonstrate the evolution dynamics of single photons in the device.
Fig. 4. a, Experimental setup of the quantum measurement (see Methods for details); b-e, Measured photon coincidences per second for the V-modes when single-waveguide state (e.g., | 1 1 0 S 0 2 or | 0 1 0 S 1 2 ) (b, c) and their superposition states (d, e) are excited, where the phenomenon of chiral transport of single photons occurs. The encircling direction is indicated in the inset; f-i, Items shown are the same as those in (b-e)except for the H-modes, where the chiral phenomenon is absent at 810 nm. The directional coupler (shorted for DC in a) is removed in the measurement of (b), (c), (f) and (g).
The dynamics of the states | 1 1 0 S 0 2 and | 0 1 0 S 1 2 were firstly tested, and single photons could enter and exit the sample via port 1, 2, 1′, or 2′. The measured photon coincidences at different output ports as a function of the input port are summarized in Fig. 4b and c for the V-modes. Fig. 4b shows that, for counter-clockwise loops, the photon coincidence measured at port 2′ is considerably larger than that at port 1′, no matter via which port the single photon was launched. The situation is just opposite for clockwise loops in Fig. 4c, where port 1 always shows the largest photon coincidence. In addition, for either counter-clockwise loops or clockwise loops, the photon coincidence of the adiabatic case (i.e., input from port 1 or port 2′) is also higher than that of the case with NATs (i.e., input from port 2 or port 1′).
Subsequently, the superposition states were tested by adding a 1:1 directional coupler (with port A and B) before the sample chip, and superposition states ( | 1 1 0 S 0 2 + e i φ | 0 1 0 S 1 2 ) / 2 can be generated at the input side of the sample. Here, φ denotes a phase difference which is equal to π/2 by choosing a proper length of the directional coupler in the experiment, but its value does not affect the measurement results since the device exhibits a chiral transmission feature. The measured photon coincidences are given in Fig. 4d and e for counter-clockwise loops and clockwise loops, respectively, where the chiral phenomenon is also observed. Therefore, by the dynamical encirclement of a second-order EP in the proposed passive anti-PT-symmetric system, the on-chip chiral transport of single photons has been realized, as single photons will most probably exit the device via waveguide 2 for left-to-right transmissions while via waveguide 1 for right-to-left transmissions. This chiral strategy would be useful for on-chip quantum applications that involve the path-encoding or polarization-encoding of single photons38,39. For comparison, test on the dynamics of the H-modes was also conducted and the corresponding results were shown in Fig. 4f-i, where the chiral dynamics does not occur at 810 nm.

CONCLUSION

To conclude, investigations on a passive anti-PT-symmetric system in the single-photon regime have been conducted, revealing the topological structure around a second-order EP of the system. By dynamically encircling the EP in a designed parameter space, the on-chip chiral transport of single photons has been realized, which has the potential to act as the building block of on-chip quantum devices that require an asymmetric transmission feature. The re-exposure technique in the experimental setup allows the introduction of highly tunable loss to the waveguide, making the experimental platform quite useful for the exploration of non-Hermitian quantum physics. The femtosecond laser direct writing technique can be employed to fabricate three-dimensional on-chip devices34-36 therefore three-dimensional non-Hermitian single-photon manipulation schemes are expected to be developed in the future. Meanwhile, the functionality of the fabricated devices (e.g., directional coupler) is reconfigurable by using a secondary direct writing technique40. A current trend for quantum photonic integrated circuits is to combine multiple materials and platforms in order to fully make use of their respective advantages41. In this sense, in addition to its advantage of three-dimensional integration and reconfiguration, the proposed platform is expected to be co-integrated with other quantum-photonic technologies to make up its limitation in terms of integrated quantum sources and detectors. Nitrogen-vacancy color centers in diamonds, which can also be prepared by using femtosecond laser direct writing techniques42, are good candidates for on-chip single photon sources. Integrating semiconductor single-photon avalanche photodiodes43 with the proposed photonic chip via heterogeneous approach is a promising solution to the detecting problem. It is expected that the proposed platform will play a key role in the next generation high-performance wafer-scale quantum photonic integrated circuits.

METHODS

Sample fabrication

The waveguides were fabricated inside boroaluminosilicate glasses (Corning EAGLE 2000, n = 1.504) and the refractive index contrast between the waveguide and the background is ∼0.0025. To fabricate the sample, we focused a Ti:sapphire laser (Light Conversion Carbide 5W, repetition rate of 1 MHz, pulse energy of 200 nJ and pulse duration of 290 fs) 170 µm below the glass surface with the adoption of a ×40 microscope (NA = 0.75). An Aerotech system was employed to control the motion of the glass in order to write the waveguides. The waveguide exhibits a size of ∼6.85 µm × 5.23 µm under a writing speed of 40 mm/s. The transmission loss in waveguides 1 and 2 is ∼0.3 dB/cm, which is significantly lower than that in waveguide S.

Re-exposure technique to introduce losses

The loss in waveguide S was introduced with the adoption of a re-exposure technique. To be specific, a normal waveguide S was firstly fabricatedand then equally-spaced points in waveguide S were re-exposed to introduce scatterers. The exposure time is 10 ms with the laser power of 140 mW and the distance between adjacent points is ∼10 µm. Under these conditions, the scattering loss induced by each scatterer was measured to be ∼0.04 dB, which is corresponding to a transmission loss in waveguide S of 40 dB/cm.

Quantum measurement

As depicted in Fig. 4a, a continuous-wave pump laser at 405 nm was used as the source. A half wave plate (HWP) and a polarization beam splitter (PBS) were employed to manipulate the polarization and intensity of the beam. After going through a Beta Barium Borate (BBO) crystal, indistinguishable pairs of photons at 810 nm were generated. Subsequently, an HWP and a quarter wave plate (QWP) were employed to control the polarization of each single photon. One single photon was injected into a single-mode fiber (SMF) and finally collected by an avalanche photodetector (APD). The other single photon was injected into the sample (the input port can be port 1, port 2, port 1′, or port 2′) and another APD was used at the corresponding output port to collect the single photon. Finally, coincidence measurement was performed based on the data collected by the two APDs. In the measurement of Fig. 4d, e, h, i, a directional coupled (DC) was added before the device in order to generate the superposition states. The DC with a splitting ratio of 1 : 1 consists of double waveguides on a chip, while the device in the current work was fabricated on another chip. The two chips were aligned but there still exist coupling losses. As a result, the measured photon coincidences in Fig. 4d, e, h, i are much lower than those in Fig. 4b, c, f, g.

Formula of the encircling loop

The loop in the g-α parameter space takes the form: g 1 ( z ) = cos ( 2 π z / L + π / 4 ) 32 cos 2 ( 2 π z / L ) + 25 sin 2 ( 2 π z / L ) + 6 and g 2 ( z ) = sin ( 2 π z / L + π / 4 ) 32 cos 2 ( 2 π z / L ) + 25 sin 2 ( 2 π z / L ) + 6 , where, the unit is µm. Then by defining g = (g1+g2)/2 and α = (g1g2)/(g1+g2), the system in the g-α parameter space can be studied.

MISCELLANEA

Acknowledgements This work was supported by National Natural Science Foundation of China (NSFC) under Grants 61825502, 11974140 and #61827826, and Scientific and Technological Development Plan Program of Jilin Province (SKL202302012). Work done in Hong Kong was supported by RGC Hong Kong (N_HKUST608/17, AoE/P-502/20 and C6013-18G-A) and by the Croucher Foundation.
Supplementary materials Supplementary material associated with this arti- cle can be found, in the online version, at doi:10.1016/j.chip.2023.100066 .
Declaration of Competing Interest The authors declare no competing interests.
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