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Implementing hardware primitives based on memristive spatiotemporal variability into cryptography applications
Chip,
2023, 2(1):
100040-12.
DOI: 10.1016/j.chip.2023.100040
Fig. 1. Spatiotemporal variability of memristor. a, The illustration of DDV and the device structure. b, The typical resistive switching IV curves of memristor, where the CC is set as 100 µA to prevent hard breakdown and overshooting, more results of CCV could be found in Fig. 3 . c, Energy diagram showing charge transfer of the redox reaction between Ag atom in the filaments and Ag ion dissolved in the AlOx layer; those effects differ from device to device and cycle to cycle, indicating spatiotemporal variability. d, The T2T variability includes the RTN signals, d1-d3 exhibit the current fluctuation under different VBG, ranging from 0 V to -0.2 V, the SEM image of memristor device array (e) and the single device (f). g, The vertical structure of the memristor by TEM observation, where the thickness of AlOx is approximately 6 nm.
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