A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
Xu Ru, Chen Peng, Liu Xiancheng, Zhao Jianguo, Zhu Tinggang, Chen Dunjun, Xie Zili, Ye Jiandong, Xiu Xiangqian, Wan Fayu, Chang Jianhua, Zhang Rong, Zheng Youdou
Chip
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2024, (1): 100079
-8
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DOI: 10.1016/j.chip.2023.100079
