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| Analysis and Modeling of the Impact of Parasitic Parameters on SiC MOSFET Switching Characteristics |
| YU Hong， LIU Yigang， LI Ying， QIAO Jinxin， JIAN Fangheng |
| Shanghai Electro-Mechanical Engineering Institute， Shanghai 201109， China |
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Abstract To explore the effects of parasitic parameters in the power driving circuit on the SiC MOSFET high-speed switch characteristics, this paper systematically studied the material properties of SiC MOSFET and the dynamic characteristics in the transient behaviour of switching. The influence of various parasitic element parameters on the switching process was analysed. The theoretical model of SiC MOSFET in the turn-on and turn-off process was established, and a double-pulse simulation platform was developed. A virtual simulation environment consistent with the physical parameters was constructed, and the test curves of SiC MOSFET under different gate-source capacitances and gate resistance were acquired through simulation and experiment. Finally, the simulation results were compared with the test results, where the effects of gate resistance and gate-source capacitance parameters on SiC MOSFET switch characteristics were verified. In the meantime, the accuracy and precision of the simulation model were also checked.
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Received: 21 October 2024
Published: 23 May 2025
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2025, Vol. 8 
