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Nano-Micro Letters  2024, Vol. 16 Issue (1): 192-    DOI: 10.1007/s40820-024-01394-5
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Liuan Li1, Shi Fang1, Wei Chen1, Yueyue Li2, Mohammad Fazel Vafadar3, Danhao Wang1, Yang Kang1, Xin Liu1, Yuanmin Luo1, Kun Liang1, Yiping Dang4, Lei Zhao4, Songrui Zhao3, Zongzhi Yin2(), Haiding Sun1()
Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications
Liuan Li1, Shi Fang1, Wei Chen1, Yueyue Li2, Mohammad Fazel Vafadar3, Danhao Wang1, Yang Kang1, Xin Liu1, Yuanmin Luo1, Kun Liang1, Yiping Dang4, Lei Zhao4, Songrui Zhao3, Zongzhi Yin2(), Haiding Sun1()
1 iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People’s Republic of China
2 Department of Obstetrics and Gynecology, The First Affiliated Hospital of Anhui Medical University, No 218 Jixi Road, Hefei, 230022, People’s Republic of China
3 Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada
4 Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, No 1277 Jiefang Ave., Wuhan, 430022, People’s Republic of China
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Liuan Li
Shi Fang
Wei Chen
Yueyue Li
Mohammad Fazel Vafadar
Danhao Wang
Yang Kang
Xin Liu
Yuanmin Luo
Kun Liang
Yiping Dang
Lei Zhao
Songrui Zhao
Zongzhi Yin
Haiding Sun
Abstract：

Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications. In particular, emerging photoelectrochemical (PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics. Herein, a PEC-type photosensor was carefully designed and constructed by employing gallium nitride (GaN) p-n homojunction semiconductor nanowires on silicon, with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide (CoNiOx). Essentially, the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface, while CoNiOx decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface. Consequently, the constructed photosensor achieves a high responsivity of 247.8 mA W−1 while simultaneously exhibiting excellent operating stability. Strikingly, based on the remarkable stability and high responsivity of the device, a glucose sensing system was established with a demonstration of glucose level determination in real human serum. This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.
Key words： p-n GaN nanowires    Strategic p-doping    Surface decoration    Photoelectrochemical sensor    Glucose sensing
收稿日期: 2024-01-31      出版日期: 2024-05-14
通讯作者: Zongzhi Yin, Haiding Sun   
引用本文:   
Liuan Li, Shi Fang, Wei Chen, Yueyue Li, Mohammad Fazel Vafadar, Danhao Wang, Yang Kang, Xin Liu, Yuanmin Luo, Kun Liang, Yiping Dang, Lei Zhao, Songrui Zhao, Zongzhi Yin, Haiding Sun. [J]. Nano-Micro Letters, 2024, 16(1): 192-.
Liuan Li, Shi Fang, Wei Chen, Yueyue Li, Mohammad Fazel Vafadar, Danhao Wang, Yang Kang, Xin Liu, Yuanmin Luo, Kun Liang, Yiping Dang, Lei Zhao, Songrui Zhao, Zongzhi Yin, Haiding Sun. Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications. Nano-Micro Letters, 2024, 16(1): 192-.
链接本文:  
https://www.qk.sjtu.edu.cn/nml/CN/10.1007/s40820-024-01394-5      或      https://www.qk.sjtu.edu.cn/nml/CN/Y2024/V16/I1/192
Fig. 1  
Fig. 2  
Fig. 3  
Fig. 4  
Materials Wavelength (nm) Responsivity (mA W−1) Stability (h) Self-powered Refs
p-n GaN/CoNiOx nanowires 340 247.8 27.5 Yes This work
Bi2O2S nanosheets 365 2.40 1.4 Yes [52]
a-Ga2O3 films 254 12.90 0.28 Yes [53]
Se 525 10.38 2.8 Yes [54]
2D InSe 365 10.14 0.28 Yes [55]
Violet phosphorus nanosheets 350 0.03 2.8 Yes [56]
AlGaN/Rh-Cr2O3 nanowires 255 175 1.0 Yes [57]
Pt/AlGaN/GaN 255 37.61 0.97 Yes [46]
GaN/Pt nanowires 365 42.4 3.39 Yes [47]
Cu@GaN NWs 458 5.04 0.56 Yes [8]
GaN@Ga2O3 NAs 255 93.48 0.17 Yes [51]
GaN NWs/AuNCs 310 1.9 5.6 Yes [49]
GaN NWs/CsPbBr3 310 1.08 2.8 Yes [50]
GaN/Cu2O NWs 365 0.96 0.14 Yes [48]
Table 1  
Fig. 5  
Sample no. Determined by the hospital (mM) Determined by the PEC sensor (mM) Recovery (%)
1 6.41 6.70 104.50
2 8.00 8.45 105.63
3 4.71 5.12 108.68
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