Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI3 Quantum Dot Light-Emitting Diodes

doi:10.1007/s40820-024-01321-8

Abstract

Abstract:

CsPbI₃ perovskite quantum dots (QDs) are ideal materials for the next generation of red light-emitting diodes. However, the low phase stability of CsPbI₃ QDs and long-chain insulating capping ligands hinder the improvement of device performance. Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control. Here, we proposed a new ligand exchange strategy using a proton-prompted in-situ exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI₃ QDs. This exchange strategy maintained the size and morphology of CsPbI₃ QDs and improved the optical properties and the conductivity of CsPbI₃ QDs films. As a result, high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45% and an operational half-life of 10.79 h.

Key words: CsPbI₃ perovskite quantum dots, Light-emitting diodes, Ligand exchange, Proton-prompted in-situ exchange

Yanming Li, Ming Deng, Xuanyu Zhang, Lei Qian, Chaoyu Xiang. Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI₃ Quantum Dot Light-Emitting Diodes[J]. Nano-Micro Letters, 2024, 16(1): 105-.

Yanming Li, Ming Deng, Xuanyu Zhang, Lei Qian, Chaoyu Xiang. [J]. Nano-Micro Letters, 2024, 16(1): 105-.

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URL: https://www.qk.sjtu.edu.cn/nml/EN/10.1007/s40820-024-01321-8

https://www.qk.sjtu.edu.cn/nml/EN/Y2024/V16/I1/105

Figures/Tables 4

Fig. 1 a Strategy diagram of in situ exchange between 5AVA ligand and OA/OAm ligand driven by HI. b The UV-vis absorption and fluorescence spectra of CsPbI₃ QDs purified once with different 5AVAI content. c Photos of CsPbI₃ QDs treated with different 5AVAI amounts under ultraviolet light (365 nm). d PLQY of CsPbI₃ QDs treated with different amounts of 5AVAI

Fig. 2 a The UV-vis absorption and fluorescence spectra of CsPbI₃ QDs with and without 5AVAI were purified twice. The inset images show the photo of QDs (left: without 5AVAI; right: with 5AVAI) under ultraviolet (365 nm) and the corresponding PLQY value. b Stability of CsPbI₃ QD with and without 5AVAI under ambient conditions (temperature of 25 ± 5 °C and humidity of 50 ± 10%), the inset images show the photos of two kinds of QDs after different storage days. TEM images of CsPbI₃ QDs c with and d without 5AVAI

Fig. 3 a FTIR spectra of CsPbI₃ QDs with and without 5AVAI. b TGA of CsPbI₃ QDs with and without 5AVAI. c XRD spectra of CsPbI₃ QDs films with and without 5AVAI. d Time-resolved photoluminescence (TRPL) decay of CsPbI₃ QDs films with and without 5AVAI

Fig. 4 a QLEDs device structure diagram. b Normalized electroluminescence spectra of CsPbI₃ QDs devices with and without 5AVAI treatment. c CIE coordinates correspond to the electroluminescence spectra of devices based on 5AVAI-treated CsPbI₃ QDs. QLEDs operating characteristics based on CsPbI₃ QDs with and without 5AVAI: d current density and luminance-voltage curve; e EQE-current density curve. f QLEDs stability based on CsPbI₃ QDs with and without 5AVAI treatment

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