A High-Resistance SOT Device Based Computing-in-Memory Macro With High Sensing Margin and Multi-Bit MAC Operations for AI Edge Inference

JUNZHAN LIU, JINYAO MI, YANG LIU, LIANG ZHANG, HE ZHANG, WANG KANG

Integrated Circuits and Systems ›› 2025, Vol. 2 ›› Issue (3) : 102-109.

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Integrated Circuits and Systems ›› 2025, Vol. 2 ›› Issue (3) : 102-109. DOI: 10.23919/ICS.2025.3567939
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A High-Resistance SOT Device Based Computing-in-Memory Macro With High Sensing Margin and Multi-Bit MAC Operations for AI Edge Inference

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2025, 2(3): 102-109 https://doi.org/10.23919/ICS.2025.3567939

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